Electron beam lithography

Electron Beam Lithography

Electron beam lithography

to get instant updates about 'Electron Beam Lithography' on your MyPage. Meet other similar minded people. Its Free!

X 

All Updates


Description:
Electron beam lithography (often abbreviated as e-beam lithography) is the practice of emitting a beam of electrons in a patterned fashion across a surface covered with a film (called the resist), ("exposing" the resist) and of selectively removing either exposed or non-exposed regions of the resist ("developing"). The purpose, as with photolithography, is to create very small structures in the resist that can subsequently be transferred to the substrate material, often by etching. It was developed for manufacturing integrated circuits, and is also used for creating nanotechnology architectures.

The primary advantage of electron beam lithography is that it is one of the ways to beat the diffraction limit of light and make features in the nanometer regime. This form of maskless lithography has found wide usage in photomask-making used in photolithography, low-volume production of semiconductor components, and research & development.

The key limitation of electron beam lithography is throughput, i.e., the very long time it takes to expose an entire silicon wafer or glass substrate. A long exposure time leaves the user vulnerable to beam drift or instability which may occur during the exposure. Also, the turn-around time for reworking or re-design is lengthened unnecessarily if the pattern is not being changed the second time.

Electron beam lithography systems

Electron beam lithography systems used in...
Read More

No feeds found

All
wait Posting your question. Please wait!...


No updates available.
No messages found
Suggested Pages
RRR
RRR
Tell your friends >
about this page
 Create a new Page
for companies, colleges, celebrities or anything you like.Get updates on MyPage.
Create a new Page
 Find your friends
  Find friends on MyPage from