Static induction thyristor

Static Induction Thyristor

Static induction thyristor

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The Static induction thyristor (SIT, SITh) is a thyristor with a buried gate structure in which the gate electrodes are placed in n-base region. Since they are normally on-state, gate electrodes must be negatively biased to hold off-state.

Static induction transistor (SIT) is a high power, high frequency device. It is a vertical structure device with short multichannel. Being a vertical device, the SIT structure offers advantages in obtaining higher breakdown voltages than a Field-effect transistor (FET). For the SIT, it is not limited by the surface breakdown between gate and drain.


An SIT has:
  • short channel length
  • low gate series resistance
  • low gate-source capacitance
  • small thermal resistance
  • low noise
  • low distortion
  • high audio frequency power capability
  • short turn-on and turn-off time, typically 0.25 μs

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